Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 142
... caused concerns about the integrity of the structure . The fact that the ∞ is much higher than the a suggests that ... cause some structure damages . To address these concerns , the out - of - plane mechanical properties have a ( ppm ...
... caused concerns about the integrity of the structure . The fact that the ∞ is much higher than the a suggests that ... cause some structure damages . To address these concerns , the out - of - plane mechanical properties have a ( ppm ...
Page 165
... causing a semi - opaque visible emission which could be observed by conventional imaging hardware . The BCB fluorescent quantum yield , or efficiency , is similar to fluorescent dyes so that only a small amount of BCB need be present in ...
... causing a semi - opaque visible emission which could be observed by conventional imaging hardware . The BCB fluorescent quantum yield , or efficiency , is similar to fluorescent dyes so that only a small amount of BCB need be present in ...
Page 214
... cause a rise - time degradation of 35ps . These were de - emebedded using Fourier transforms . After de- embedding ... caused due to the higher resistivity metal as shown in Figure 1 ( 1.65x ) , and surface roughness and columnar metal ...
... cause a rise - time degradation of 35ps . These were de - emebedded using Fourier transforms . After de- embedding ... caused due to the higher resistivity metal as shown in Figure 1 ( 1.65x ) , and surface roughness and columnar metal ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch