Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 42
... change in the radius of curvature of wafer . As seen in Table 1 , there is no detectable change in the film thickness , and the radius of wafer , indicating no water absorption takes place . This is consistent with FTIR results , which ...
... change in the radius of curvature of wafer . As seen in Table 1 , there is no detectable change in the film thickness , and the radius of wafer , indicating no water absorption takes place . This is consistent with FTIR results , which ...
Page 235
... change shows a change of 0.1 % 6 , supporting a much lower defect density observed on the surface of the polymer . The FTIR studies did not yield any useful information , probably because whatever changes occur happen at the surface ...
... change shows a change of 0.1 % 6 , supporting a much lower defect density observed on the surface of the polymer . The FTIR studies did not yield any useful information , probably because whatever changes occur happen at the surface ...
Page 265
... changes are other microstructural modifications such as pore coarsening , pore surface chemistry changes and surface area loss as well as changes in the degree of shrinkage during drying [ 6 ] . In general for these dielectric ...
... changes are other microstructural modifications such as pore coarsening , pore surface chemistry changes and surface area loss as well as changes in the degree of shrinkage during drying [ 6 ] . In general for these dielectric ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch