Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
From inside the book
Results 1-3 of 67
Page 229
INVESTIGATIONS OF THE CHEMICAL - MECHANICAL POLISHING OF
POLYMER FILMS FOR ILD APPLICATIONS JAN . M . NEIRYNCK , S . P .
MURARKA AND R . J . GUTMANN Center for Integrated Electronics and
Electronic ...
INVESTIGATIONS OF THE CHEMICAL - MECHANICAL POLISHING OF
POLYMER FILMS FOR ILD APPLICATIONS JAN . M . NEIRYNCK , S . P .
MURARKA AND R . J . GUTMANN Center for Integrated Electronics and
Electronic ...
Page 240
The fluorinated SiO2 film properties will also be compared with a non- fluorinated
Si02 film formed by atmospheric pressure chemical vapor deposition (APCVD)
using tetraethoxysilane (TEOS) and ozone (03) as gas sources. Furthermore ...
The fluorinated SiO2 film properties will also be compared with a non- fluorinated
Si02 film formed by atmospheric pressure chemical vapor deposition (APCVD)
using tetraethoxysilane (TEOS) and ozone (03) as gas sources. Furthermore ...
Page 249
PREPARATION AND PROPERTIES OF FLUORINATED AMORPHOUS CARBON
THIN FILMS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Kazuhiko ENDO and Toru TATSUMI Microelectronics Research Laboratories ,
NEC ...
PREPARATION AND PROPERTIES OF FLUORINATED AMORPHOUS CARBON
THIN FILMS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Kazuhiko ENDO and Toru TATSUMI Microelectronics Research Laboratories ,
NEC ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers