Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 55
These results suggested that this system might be directly useful as a spin - on low dielectric constant coating . However , when the same monomer - photoinitiator solutions were spun onto either bare silicon wafers or aluminum coated ...
These results suggested that this system might be directly useful as a spin - on low dielectric constant coating . However , when the same monomer - photoinitiator solutions were spun onto either bare silicon wafers or aluminum coated ...
Page 63
The coating thicknesses were determined with a NanoSpec AFT " . ... Viscosity and Film Thickness Solvent Resistance Polymer dielectric coatings must , after cure , exhibit extremely good resistance to crazing , swelling or dissolution ...
The coating thicknesses were determined with a NanoSpec AFT " . ... Viscosity and Film Thickness Solvent Resistance Polymer dielectric coatings must , after cure , exhibit extremely good resistance to crazing , swelling or dissolution ...
Page 66
Another indication of the thermal stability of polymeric coatings is derived from a profile of the change in film ... The initial film thickness was obtained after spin - coating followed by a one minute exposure on a hot plate at 250 ...
Another indication of the thermal stability of polymeric coatings is derived from a profile of the change in film ... The initial film thickness was obtained after spin - coating followed by a one minute exposure on a hot plate at 250 ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |