Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 113
... compared to photo - resists for the purpose of fabrication of submicron vias in the new materials . Compatibility of the TAE polymer with copper was studied using a Perkin - Elmer 6300 Secondary Ion Mass Spectroscopy ( SIMS ) system on ...
... compared to photo - resists for the purpose of fabrication of submicron vias in the new materials . Compatibility of the TAE polymer with copper was studied using a Perkin - Elmer 6300 Secondary Ion Mass Spectroscopy ( SIMS ) system on ...
Page 178
... compared to aluminum - copper alloys in planar test structures ( nearly two orders of magnitude better than elemental aluminum ) . Reported results indicate more than an order of magnitude better electromigration with large grain copper ...
... compared to aluminum - copper alloys in planar test structures ( nearly two orders of magnitude better than elemental aluminum ) . Reported results indicate more than an order of magnitude better electromigration with large grain copper ...
Page 244
... compared to that for the TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are observed at the wavenumbers of 930 and 1080 cm ' , respectively . The absorption peak position ...
... compared to that for the TEOS / O , SiO2 film . For the RTCVD - SiOF film , two absorption peaks corresponding to Si - F and Si - O bonds are observed at the wavenumbers of 930 and 1080 cm ' , respectively . The absorption peak position ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch