Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 14
Page 233
... concentration at or near the surface of the film , does not seem to influence the polish rate at pH < 2 . The increase in polish rate with increasing pH could be attributed to a changing of charge ( total amount and per unit surface ...
... concentration at or near the surface of the film , does not seem to influence the polish rate at pH < 2 . The increase in polish rate with increasing pH could be attributed to a changing of charge ( total amount and per unit surface ...
Page 242
... concentrations across the fluorinated SiO , films , before and after pressure cooker test ( PCT ) at 125 ° C , 2.0 atm , for 520 hours . Fluorine atomic concentrations and their uniformity across the films were analyzed by secondary ion ...
... concentrations across the fluorinated SiO , films , before and after pressure cooker test ( PCT ) at 125 ° C , 2.0 atm , for 520 hours . Fluorine atomic concentrations and their uniformity across the films were analyzed by secondary ion ...
Page 263
... concentration used , and a clear trend of decreasing density with increasing TMCS is noted until the concentration is sufficiently high as to saturate the surface . We note that density and shrinkage can be varied independently by ...
... concentration used , and a clear trend of decreasing density with increasing TMCS is noted until the concentration is sufficiently high as to saturate the surface . We note that density and shrinkage can be varied independently by ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch