Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 18
Page 57
... containing monomers 6 and 7 undergo facile photopolymerization under essentially identical conditions . Data collected during thermogravimetric analysis ( TGA ) studies in nitrogen and air are presented in Table 2. The temperature at ...
... containing monomers 6 and 7 undergo facile photopolymerization under essentially identical conditions . Data collected during thermogravimetric analysis ( TGA ) studies in nitrogen and air are presented in Table 2. The temperature at ...
Page 84
... containing the non - aromatic cyclohexane unit , 6F / DACH , 18 is interesting because the polymer has a much less polarizable backbone , which gives it a low inherent dielectric constant . We were also interested in studying the ...
... containing the non - aromatic cyclohexane unit , 6F / DACH , 18 is interesting because the polymer has a much less polarizable backbone , which gives it a low inherent dielectric constant . We were also interested in studying the ...
Page 94
... containing 50 mole percent of pyromellitic dianhydride ( PMDA ) and hexafluoro- isopropylidene diphthalic acid dianhydride ( 6FDA ) combined with 4,4 ' - ( 9H - fluoren - 9- ylidene ) bisbenzeneamine ( DAPF ) has a dielectric constant ...
... containing 50 mole percent of pyromellitic dianhydride ( PMDA ) and hexafluoro- isopropylidene diphthalic acid dianhydride ( 6FDA ) combined with 4,4 ' - ( 9H - fluoren - 9- ylidene ) bisbenzeneamine ( DAPF ) has a dielectric constant ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch