Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
From inside the book
Results 1-3 of 22
Page 59
... 3500 Garrett Drive , Santa Clara , CA 95054 ABSTRACT Among the more
promising approaches to minimizing capacitance in the multilevel interconnect of
integrated circuits containing sub - half micron metal spacings is the development
of ...
... 3500 Garrett Drive , Santa Clara , CA 95054 ABSTRACT Among the more
promising approaches to minimizing capacitance in the multilevel interconnect of
integrated circuits containing sub - half micron metal spacings is the development
of ...
Page 94
... show that a copolyimide containing 50 mole percent of pyromellitic dianhydride
(PMDA) and hexafluoro- isopropylidene diphthalic acid dianhydride (6FDA)
combined with 4,4'-(9//-fluoren-9- ylidene)bisbenzeneamine (DAPF) has a
dielectric ...
... show that a copolyimide containing 50 mole percent of pyromellitic dianhydride
(PMDA) and hexafluoro- isopropylidene diphthalic acid dianhydride (6FDA)
combined with 4,4'-(9//-fluoren-9- ylidene)bisbenzeneamine (DAPF) has a
dielectric ...
Page 94
Conversely , an example is provided to show that a copolyimide containing 50
mole percent of pyromellitic dianhydride ( PMDA ) and hexafluoroisopropylidene
diphthalic acid dianhydride ( 6FDA ) combined with 4 , 4 ' - ( 9H - fluoren ...
Conversely , an example is provided to show that a copolyimide containing 50
mole percent of pyromellitic dianhydride ( PMDA ) and hexafluoroisopropylidene
diphthalic acid dianhydride ( 6FDA ) combined with 4 , 4 ' - ( 9H - fluoren ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
17 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers