Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 49
... Cooling trap Source To pump Air Valve Mercury Gauge Fig . 1 The CVD system for deposition of PNT - N and PNT - F films Conclusions : The main objective of our research is to find new precursors and new techniques to vapor deposit thin ...
... Cooling trap Source To pump Air Valve Mercury Gauge Fig . 1 The CVD system for deposition of PNT - N and PNT - F films Conclusions : The main objective of our research is to find new precursors and new techniques to vapor deposit thin ...
Page 82
... cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer . Polyimide - co - poly ( propylene oxide ) triblock copolymers ...
... cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer . Polyimide - co - poly ( propylene oxide ) triblock copolymers ...
Page 127
... ramping of 10 ° C / min Stress ( MPa ) 50 Stress vs. Temperature for Cytop 40 heating cooling 30 20 10 100 200 300 400 500 Temperature ( C ) Figure 5. Stress of Cytop as a function of temperature Force ( mN ) 1 Force ( mN ) 10 127.
... ramping of 10 ° C / min Stress ( MPa ) 50 Stress vs. Temperature for Cytop 40 heating cooling 30 20 10 100 200 300 400 500 Temperature ( C ) Figure 5. Stress of Cytop as a function of temperature Force ( mN ) 1 Force ( mN ) 10 127.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch