Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 80
... copolymer approach.13.14.15.16 In these systems the pore sizes are in the nanometer range thus the term " nanofoam " . The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks , the latter ...
... copolymer approach.13.14.15.16 In these systems the pore sizes are in the nanometer range thus the term " nanofoam " . The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks , the latter ...
Page 82
... copolymers : Poly ( alkyl ester ) route Triblock copolymers could also be prepared in a two - stage process in which the corresponding poly ( amic ethyl ester ) copolymer can be isolated and analyzed and subsequently processed into ...
... copolymers : Poly ( alkyl ester ) route Triblock copolymers could also be prepared in a two - stage process in which the corresponding poly ( amic ethyl ester ) copolymer can be isolated and analyzed and subsequently processed into ...
Page 86
... Copolymer Processable Intermediate HOCH2CH3 A | F3C CF3 F3C CF3 CF3 Scheme 2. Synthesis of Polyimides : Poly ( amic alkyl ester ) Route poly ( amic alkyl ester ) intermediate . This intermediate is useful because it can be isolated ...
... Copolymer Processable Intermediate HOCH2CH3 A | F3C CF3 F3C CF3 CF3 Scheme 2. Synthesis of Polyimides : Poly ( amic alkyl ester ) Route poly ( amic alkyl ester ) intermediate . This intermediate is useful because it can be isolated ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch