Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 80
The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks ... It is important that the initial block copolymer morphology is in the desired size and shape of the foamed structure that is ...
The foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks ... It is important that the initial block copolymer morphology is in the desired size and shape of the foamed structure that is ...
Page 82
1 1 1 Polyimide - co - poly ( propylene oxide ) triblock copolymers : Poly ( alkyl ester ) route Triblock copolymers could also be prepared in a two - stage process in which the corresponding poly ( amic ethyl ester ) copolymer can be ...
1 1 1 Polyimide - co - poly ( propylene oxide ) triblock copolymers : Poly ( alkyl ester ) route Triblock copolymers could also be prepared in a two - stage process in which the corresponding poly ( amic ethyl ester ) copolymer can be ...
Page 86
Copolymers can also be prepared via the standard two step poly ( amic acid ) route ( Scheme 3 ) . ... Block copolymer containing various amounts of labile block were obtained though CF3 CF3 HN-NH2 topotoi -NH2 6FDAm 6FXDA Labile Block ...
Copolymers can also be prepared via the standard two step poly ( amic acid ) route ( Scheme 3 ) . ... Block copolymer containing various amounts of labile block were obtained though CF3 CF3 HN-NH2 topotoi -NH2 6FDAm 6FXDA Labile Block ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |