Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 111
The dielectric constant must be lower than that of amorphous silicon dioxide and possess the right properties for integration with future metallurgies such as copper . Several thermoset resins that were predicted to possess the ...
The dielectric constant must be lower than that of amorphous silicon dioxide and possess the right properties for integration with future metallurgies such as copper . Several thermoset resins that were predicted to possess the ...
Page 178
COPPER INTERCONNECT TECHNOLOGY OVERVIEW A brief overview of copper interconnect technology is best contrasted with leading - edge aluminum interconnect technology . We assume that all advanced interconnect alternatives will include ...
COPPER INTERCONNECT TECHNOLOGY OVERVIEW A brief overview of copper interconnect technology is best contrasted with leading - edge aluminum interconnect technology . We assume that all advanced interconnect alternatives will include ...
Page 183
Copper CMP is basically a two - step process of mechanical abrasion of the copper surface followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other ...
Copper CMP is basically a two - step process of mechanical abrasion of the copper surface followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |