Low-dielectric Constant Materials |
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Page 51
... reducing crosstalk between the discrete components. Second, they could
provide the function of planarizing the topography of a chip during many
fabrication steps. Lastly, they could act as barriers to contaminants and corrosive
agents and ...
... reducing crosstalk between the discrete components. Second, they could
provide the function of planarizing the topography of a chip during many
fabrication steps. Lastly, they could act as barriers to contaminants and corrosive
agents and ...
Page 114
However, the Cu was encapsulated with Si3N4 which prevented any migration of
the Cu into the polymer and protects the Cu from corrosion during processing [10]
. To maintain the advantages of lower dielectric constants, these ILD structures ...
However, the Cu was encapsulated with Si3N4 which prevented any migration of
the Cu into the polymer and protects the Cu from corrosion during processing [10]
. To maintain the advantages of lower dielectric constants, these ILD structures ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |