Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 17
Page 4
... cost of IC chips . Different materials and process flows will have different fabrication cost . It is , therefore , necessary to carry out cost analysis of various interconnection options to find out their relative fabrication cost ...
... cost of IC chips . Different materials and process flows will have different fabrication cost . It is , therefore , necessary to carry out cost analysis of various interconnection options to find out their relative fabrication cost ...
Page 60
... cost as it related to patterning of sloped vias , the more recent interest is being driven by ( 1 ) circuit performance , as reflected in speed , power consumption , and signal - to - noise ratios , and ( 2 ) cost . The current cost ...
... cost as it related to patterning of sloped vias , the more recent interest is being driven by ( 1 ) circuit performance , as reflected in speed , power consumption , and signal - to - noise ratios , and ( 2 ) cost . The current cost ...
Page 217
... cost of a factory to provide the necessary capabilities requires dauntingly large investments of capital engendering the need for lower cost manufacturing methods . One can expect that new materials should also offer a lower - cost ...
... cost of a factory to provide the necessary capabilities requires dauntingly large investments of capital engendering the need for lower cost manufacturing methods . One can expect that new materials should also offer a lower - cost ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch