Low-dielectric Constant Materials |
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Page 55
... temperature of the poly(indane) produced by cationic photopolymerization
could not be measured suggesting that due to the rigidity of the chain backbone
and to crosslinking, that the Tg lies near to the thermal decomposition
temperature.
... temperature of the poly(indane) produced by cationic photopolymerization
could not be measured suggesting that due to the rigidity of the chain backbone
and to crosslinking, that the Tg lies near to the thermal decomposition
temperature.
Page 251
It has been reported that this ion irradiation reduces the hydrogen concentration
of the films and enhances the crosslinking.6 Therefore the increase in the
dielectric constant on the powered electrode with rf power is due to the
crosslinking of ...
It has been reported that this ion irradiation reduces the hydrogen concentration
of the films and enhances the crosslinking.6 Therefore the increase in the
dielectric constant on the powered electrode with rf power is due to the
crosslinking of ...
Page 253
This thickness reduction indicates that the films deposited with CF4 did not have
highly crosslinking structures and that the film components were evaporated. This
reduction was higher than that in the parallel-plate reactor which were reduced ...
This thickness reduction indicates that the films deposited with CF4 did not have
highly crosslinking structures and that the film components were evaporated. This
reduction was higher than that in the parallel-plate reactor which were reduced ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
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Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI