Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 118
... cured samples and samples cured with RIP using different lamp configurations . By exploiting the contribution of photoeffects from a dual spectral source to reduce the processing temperature ( in addition to time ) , we have further ...
... cured samples and samples cured with RIP using different lamp configurations . By exploiting the contribution of photoeffects from a dual spectral source to reduce the processing temperature ( in addition to time ) , we have further ...
Page 119
... cured in a furnace at 300 ° C and 400 ° C. Atmospheric pressure , a nitrogen ambient , and a cure time of 15 minutes was maintained for each of the curing cycles . In the RIP system , the cure temperature was monitored and controlled ...
... cured in a furnace at 300 ° C and 400 ° C. Atmospheric pressure , a nitrogen ambient , and a cure time of 15 minutes was maintained for each of the curing cycles . In the RIP system , the cure temperature was monitored and controlled ...
Page 256
... cured film of SOG ( a ) with an optical microscope , we always found striations in the radial direction . The optical measurement showed the peak to valley height of about 500A . The other SOGS were coated and cured into nice uniform ...
... cured film of SOG ( a ) with an optical microscope , we always found striations in the radial direction . The optical measurement showed the peak to valley height of about 500A . The other SOGS were coated and cured into nice uniform ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch