Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 119
... cured films was found to be 1.43 ± .03 microns . Following the cure , the residual film stress was measured using the DekTak version 2.01 software under windows installed on a 486 - SX IBM PC . 12 circular aluminum front contacts ...
... cured films was found to be 1.43 ± .03 microns . Following the cure , the residual film stress was measured using the DekTak version 2.01 software under windows installed on a 486 - SX IBM PC . 12 circular aluminum front contacts ...
Page 280
... films were baked at 80 ° C , 150 ° C and 175 ° C for 2 min at each temperature and then cured . The thickness of SOG films after soft bakes was about 2000 Å . The plasma CVD chamber was used for the argon plasma treatment . The upper ...
... films were baked at 80 ° C , 150 ° C and 175 ° C for 2 min at each temperature and then cured . The thickness of SOG films after soft bakes was about 2000 Å . The plasma CVD chamber was used for the argon plasma treatment . The upper ...
Page 281
... film significantly . The film structure progressively undergoes a structural transformation , and more densification . The typical XPS spectra of the SOG films cured in a furnace or in Ar plasma ( treatment time is 10 min ) are shown in ...
... film significantly . The film structure progressively undergoes a structural transformation , and more densification . The typical XPS spectra of the SOG films cured in a furnace or in Ar plasma ( treatment time is 10 min ) are shown in ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch