Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 107
... decreased with increasing fluorination time . The er was 2.2 at a fluorinat ion time of 20 min . Dielectric Constant ... decreased from 4.9 to 2.0 . That of polyvinylphenol ( PVP ) decreased from 3.9 to 2.4 . That of bis ...
... decreased with increasing fluorination time . The er was 2.2 at a fluorinat ion time of 20 min . Dielectric Constant ... decreased from 4.9 to 2.0 . That of polyvinylphenol ( PVP ) decreased from 3.9 to 2.4 . That of bis ...
Page 281
... decrease of Si- O - Si intensity with increasing treatment time seems to have resulted from the thickness loss during the argon plasma treatment . The peak intensity of Si - CH3 decreases significantly with increasing treatment time ...
... decrease of Si- O - Si intensity with increasing treatment time seems to have resulted from the thickness loss during the argon plasma treatment . The peak intensity of Si - CH3 decreases significantly with increasing treatment time ...
Page 283
... decrease of leakage current and increase of breakdown strength in SOG film by Ar plasma treatment seem to be resulted from the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film . Figure 7 shows ...
... decrease of leakage current and increase of breakdown strength in SOG film by Ar plasma treatment seem to be resulted from the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film . Figure 7 shows ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch