Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 165
In general , DVS - bisBCB thin films are easily produced defect free with a high degree of planarization . ... common thin film defects are variations in film thickness , foreign particles , pinholes , and residual polymer in vias .
In general , DVS - bisBCB thin films are easily produced defect free with a high degree of planarization . ... common thin film defects are variations in film thickness , foreign particles , pinholes , and residual polymer in vias .
Page 226
The failure mode for all polyimide splits involved electrical opens and extrusion defects . Whether these defects are related to defectivity in the form of pinholes or to some other aspect of polyimide processing is under investigation ...
The failure mode for all polyimide splits involved electrical opens and extrusion defects . Whether these defects are related to defectivity in the form of pinholes or to some other aspect of polyimide processing is under investigation ...
Page 233
It is pointed out that during our evaluations of the polymer surface we invariably found defects on the polished surface of the spun on polymers ( BCB and FP ) . These defects are shown in figure 5 . Fig . 5 : Pinhole defect ( a ) and ...
It is pointed out that during our evaluations of the polymer surface we invariably found defects on the polished surface of the spun on polymers ( BCB and FP ) . These defects are shown in figure 5 . Fig . 5 : Pinhole defect ( a ) and ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |