Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 262
... density silica films and characterized them by a range of techniques [ 4 ] . Questions remain including : 1 ) are pore sizes really smaller than microelectronics features , 2 ) what are the mechanical properties of these materials , 3 ...
... density silica films and characterized them by a range of techniques [ 4 ] . Questions remain including : 1 ) are pore sizes really smaller than microelectronics features , 2 ) what are the mechanical properties of these materials , 3 ...
Page 263
... density ) , 2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage ) , 4 ) nitrogen adsorption / condensation ( surface area and pore size distribution ) , 5 ) thermal gravimetric analysis ( extent of ...
... density ) , 2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage ) , 4 ) nitrogen adsorption / condensation ( surface area and pore size distribution ) , 5 ) thermal gravimetric analysis ( extent of ...
Page 266
... density ( g / cm3 ) Figure 5 Variation in bulk modulus as a function of density . CONCLUSIONS The primary xerogel property which must be controlled for IMD applications is the film bulk density . Density affects dielectric constant ...
... density ( g / cm3 ) Figure 5 Variation in bulk modulus as a function of density . CONCLUSIONS The primary xerogel property which must be controlled for IMD applications is the film bulk density . Density affects dielectric constant ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch