Low-dielectric Constant Materials |
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Page 262
Previously, we have produced low density silica films and characterized them by
a range of techniques [4]. Questions remain including: 1) are pore sizes really
smaller than microelectronics features, 2) what are the mechanical properties of ...
Previously, we have produced low density silica films and characterized them by
a range of techniques [4]. Questions remain including: 1) are pore sizes really
smaller than microelectronics features, 2) what are the mechanical properties of ...
Page 263
Figure 2 Variation of calculated average pore size for silica with density and
surface area. Experimental data from Table 1. for 1.5 hours at 70°C. In the
second step, the stock solution was diluted to 70 vol.% with ethanol, followed by
addition of ...
Figure 2 Variation of calculated average pore size for silica with density and
surface area. Experimental data from Table 1. for 1.5 hours at 70°C. In the
second step, the stock solution was diluted to 70 vol.% with ethanol, followed by
addition of ...
Page 266
CONCLUSIONS The primary xerogel property which must be controlled for IMD
applications is the film bulk density. Density affects dielectric constant (4 p => 4
dielectric constant), pore size (4 p Td), and strength (Ip => 4 K). Since the pore
size ...
CONCLUSIONS The primary xerogel property which must be controlled for IMD
applications is the film bulk density. Density affects dielectric constant (4 p => 4
dielectric constant), pore size (4 p Td), and strength (Ip => 4 K). Since the pore
size ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |