Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 263
Dried gels were characterized using : 1 ) helium pycnometry ( skeletal density ) ,
2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage
) , 4 ) nitrogen adsorption / condensation ( surface area and pore size ...
Dried gels were characterized using : 1 ) helium pycnometry ( skeletal density ) ,
2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage
) , 4 ) nitrogen adsorption / condensation ( surface area and pore size ...
Page 264
6 yield the desired density . Table 1 Variation of physical properties of surface
However , if the coating is modified silica as a function of degree of modification .
placed on a patterned wafer , then shrinkage is not desirable and hence , one ...
6 yield the desired density . Table 1 Variation of physical properties of surface
However , if the coating is modified silica as a function of degree of modification .
placed on a patterned wafer , then shrinkage is not desirable and hence , one ...
Page 266
7 Bulk density ( g / cm ) Variation in bulk modulus as a function of density . Figure
5 CONCLUSIONS The primary xerogel property which must be controlled for IMD
applications is the film bulk density . Density affects dielectric constant ( to ...
7 Bulk density ( g / cm ) Variation in bulk modulus as a function of density . Figure
5 CONCLUSIONS The primary xerogel property which must be controlled for IMD
applications is the film bulk density . Density affects dielectric constant ( to ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers