Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 133
... dependence of properties and actual constitutive behavior of dielectrics must be included to make specific predictions about specific systems . ACKNOWLEDGMENTS We would like to thank H. Hendricks from Allied Signals , L. Hrubesh from ...
... dependence of properties and actual constitutive behavior of dielectrics must be included to make specific predictions about specific systems . ACKNOWLEDGMENTS We would like to thank H. Hendricks from Allied Signals , L. Hrubesh from ...
Page 149
... dependence of Polystyrene thin film thickness at four different initial film thicknesses . Hydrogen passivated silicon ( 111 ) surface was used as the substrate . The thickness was determined from x - ray reflectivity measurements ...
... dependence of Polystyrene thin film thickness at four different initial film thicknesses . Hydrogen passivated silicon ( 111 ) surface was used as the substrate . The thickness was determined from x - ray reflectivity measurements ...
Page 275
... dependence on the laser energy density and the presence or nature of the gas ambient in the deposition system . Resistivities ( measured normal to the film plane ) ranged from ~ 100 cm for films deposited in vacuum at 5 J / cm2 to ~ 108 ...
... dependence on the laser energy density and the presence or nature of the gas ambient in the deposition system . Resistivities ( measured normal to the film plane ) ranged from ~ 100 cm for films deposited in vacuum at 5 J / cm2 to ~ 108 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch