Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 51
Page 6
... deposited by either electrochemical processes or PVD or CVD processes . In addition , the dual damascene process is ... deposited SiO , whose dielectric constant value is greater than the thermal oxide k value of 3.9 . The higher k value ...
... deposited by either electrochemical processes or PVD or CVD processes . In addition , the dual damascene process is ... deposited SiO , whose dielectric constant value is greater than the thermal oxide k value of 3.9 . The higher k value ...
Page 253
... deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH , + CF , grounded electrode 100 200 300 400 annealing temperature [ ° C ] Fig . 5. The thickness of the a- C : F films as a function of annealing ...
... deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH , + CF , grounded electrode 100 200 300 400 annealing temperature [ ° C ] Fig . 5. The thickness of the a- C : F films as a function of annealing ...
Page 275
... deposited in vacuum at 48 J / cm2 . Films deposited at 45 J / cm2 in 10 mTorr ambients of H2 or N2 showed resistivities > 106 cm and less than 100 Ncm , respectively . Sheet resistance measurements performed on a - tC films deposited on ...
... deposited in vacuum at 48 J / cm2 . Films deposited at 45 J / cm2 in 10 mTorr ambients of H2 or N2 showed resistivities > 106 cm and less than 100 Ncm , respectively . Sheet resistance measurements performed on a - tC films deposited on ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch