Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 57
Page 46
... deposition has been one of the preferred processes for generating thin films of inorganic insulators in the fabrication of microelectronic devices , because this process provides a clean , environmentally safe process to deposit thin ...
... deposition has been one of the preferred processes for generating thin films of inorganic insulators in the fabrication of microelectronic devices , because this process provides a clean , environmentally safe process to deposit thin ...
Page 240
... deposition ( LPD ) [ 9 , 10 ] , and ( iii ) a fluorotrialkoxysilane vapor treatment for a spin - on glass ( FAST - SOG ) [ 11 ] . The purpose of this paper is to compare the fluorinated SiO , film properties with each other for the ...
... deposition ( LPD ) [ 9 , 10 ] , and ( iii ) a fluorotrialkoxysilane vapor treatment for a spin - on glass ( FAST - SOG ) [ 11 ] . The purpose of this paper is to compare the fluorinated SiO , film properties with each other for the ...
Page 250
... deposition mechanism of the a - C : F films , and helicon reactor to deposit the films with high deposition rate and to prove the potential for the productive use . The parallel - plate reactor was pumped with a turbo molecular pump and ...
... deposition mechanism of the a - C : F films , and helicon reactor to deposit the films with high deposition rate and to prove the potential for the productive use . The parallel - plate reactor was pumped with a turbo molecular pump and ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch