Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 135
The anisotropy of dielectric properties were determined experimentally , the
vertical ( out - of - plane ) dielectric properties were determined by MIM ( Metal -
Insulator - Metal ) measurements , and the horizontal ( in - plane ) dielectric
properties ...
The anisotropy of dielectric properties were determined experimentally , the
vertical ( out - of - plane ) dielectric properties were determined by MIM ( Metal -
Insulator - Metal ) measurements , and the horizontal ( in - plane ) dielectric
properties ...
Page 147
T , of thin films was determined by monitoring the film thickness as a function of
temperature . T , was identified as the temperature where the thermal expansion
coefficient underwent an abrupt change . X - ray reflectivity was used to
determine ...
T , of thin films was determined by monitoring the film thickness as a function of
temperature . T , was identified as the temperature where the thermal expansion
coefficient underwent an abrupt change . X - ray reflectivity was used to
determine ...
Page 270
At LLNL , we measure the optical refractive index , n , of silica aerogel films using
ellipsometry , then calculate the density , porosity , and dielectric constants using
empirical relations for each , which have been determined to hold for ...
At LLNL , we measure the optical refractive index , n , of silica aerogel films using
ellipsometry , then calculate the density , porosity , and dielectric constants using
empirical relations for each , which have been determined to hold for ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers