Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 46
... developed in our lab to synthesize and deposit polymers , such as Teflon AF 1600 ( amorphous fluoropolymer ) , Parylene - F ( fluorinated ) , poly ( naphthalene ) ( PNT - N ) , poly ( fluorinated naphthalene ) ( PNT - F ) , which have ...
... developed in our lab to synthesize and deposit polymers , such as Teflon AF 1600 ( amorphous fluoropolymer ) , Parylene - F ( fluorinated ) , poly ( naphthalene ) ( PNT - N ) , poly ( fluorinated naphthalene ) ( PNT - F ) , which have ...
Page 109
... developed . The photo resist developed was fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo resist can be used as a interlayer dielectric . Exposing Fluorine plasma ...
... developed . The photo resist developed was fluorinated by the fluorine plasma . This application elminates the patterning process , because the fluorinated photo resist can be used as a interlayer dielectric . Exposing Fluorine plasma ...
Page 192
... developed model of Cu CMP with our understanding of polymer material properties . Hardness and adhesion are of particular concern , but results with BCB and parylene - n indicate that processes can be developed with addtional research ...
... developed model of Cu CMP with our understanding of polymer material properties . Hardness and adhesion are of particular concern , but results with BCB and parylene - n indicate that processes can be developed with addtional research ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch