Low-dielectric Constant Materials |
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Page 3
In addition, their impact on process integration, fabrication cost and device
reliability must also be considered. Since the gestation period for introducing a
new material is very long, a set of standard testing methodologies are required to
speed ...
In addition, their impact on process integration, fabrication cost and device
reliability must also be considered. Since the gestation period for introducing a
new material is very long, a set of standard testing methodologies are required to
speed ...
Page 4
The switching delay of transistors improves with smaller device dimensions,
however, circuit delay also includes the time delay of long interconnection
between circuits. The interconnect delay is getting proportionally more important
with each ...
The switching delay of transistors improves with smaller device dimensions,
however, circuit delay also includes the time delay of long interconnection
between circuits. The interconnect delay is getting proportionally more important
with each ...
Page 79
INTRODUCTION Much of the work in our laboratories is devoted to the
development of new organic polymer materials for use in the fabrication of
microelectronic devices. High performance polymers, such as polyimides, have
found a number ...
INTRODUCTION Much of the work in our laboratories is devoted to the
development of new organic polymer materials for use in the fabrication of
microelectronic devices. High performance polymers, such as polyimides, have
found a number ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |