Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 5
In addition , their impact on process integration , fabrication cost and device
reliability must also be considered . ... INTRODUCTION The growth of the IC
technology is primarily based on the continued scaling of devices to ever smaller
...
In addition , their impact on process integration , fabrication cost and device
reliability must also be considered . ... INTRODUCTION The growth of the IC
technology is primarily based on the continued scaling of devices to ever smaller
...
Page 6
The switching delay of transistors improves with smaller device dimensions ,
however , circuit delay also includes the time delay of long interconnection
between circuits . The interconnect delay is getting proportionally more important
with ...
The switching delay of transistors improves with smaller device dimensions ,
however , circuit delay also includes the time delay of long interconnection
between circuits . The interconnect delay is getting proportionally more important
with ...
Page 79
INTRODUCTION Much of the work in our laboratories is devoted to the
development of new organic polymer materials for use in the fabrication of
microelectronic devices . High performance polymers , such as polyimides , have
found a ...
INTRODUCTION Much of the work in our laboratories is devoted to the
development of new organic polymer materials for use in the fabrication of
microelectronic devices . High performance polymers , such as polyimides , have
found a ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
17 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Export Citation | BiBTeX EndNote RefMan |