Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 3
... device reliability must also be considered . Since the gestation period for introducing a new material is very long , a set of standard testing methodologies are required to speed up the development process . This review will discuss ...
... device reliability must also be considered . Since the gestation period for introducing a new material is very long , a set of standard testing methodologies are required to speed up the development process . This review will discuss ...
Page 4
... device dimensions , however , circuit delay also includes the time delay of long interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel ...
... device dimensions , however , circuit delay also includes the time delay of long interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel ...
Page 79
... device , the propagation velocity of a pulsed signal , V , is inversely proportional to the square root of the dielectric constant , e , of the propagation medium ( V = c / e " ) . Therefore the smaller the dielectric constant of the ...
... device , the propagation velocity of a pulsed signal , V , is inversely proportional to the square root of the dielectric constant , e , of the propagation medium ( V = c / e " ) . Therefore the smaller the dielectric constant of the ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch