Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 4
... device dimensions , however , circuit delay also includes the time delay of long interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel ...
... device dimensions , however , circuit delay also includes the time delay of long interconnection between circuits . The interconnect delay is getting proportionally more important with each device generation . For devices with channel ...
Page 60
... devices . Organic polymers , specifically polyimides , were used as integrated circuit IMD in production by IBM from the early 1970's through the late ' 80's [ 6 ] . The devices , which were principally bipolar , DRAM and logic ...
... devices . Organic polymers , specifically polyimides , were used as integrated circuit IMD in production by IBM from the early 1970's through the late ' 80's [ 6 ] . The devices , which were principally bipolar , DRAM and logic ...
Page 79
... devices . High performance polymers , such as polyimides , have found a number of uses in a variety of devices and components . ' The preferred use of polyimides can be attributed to their possession of many favorable properties which ...
... devices . High performance polymers , such as polyimides , have found a number of uses in a variety of devices and components . ' The preferred use of polyimides can be attributed to their possession of many favorable properties which ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch