Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 73
... dianhydride [ namely , either 3,3 ' , 4,4 ' - biphenyltetracarboxylic dianhydride ( BPDA ) or 3,3 ' , 4,4 ' - bezophenone- tetracarboxylic dianhydride ( BTDA ) or 4,4 ' - oxydiphthalic anhydride ( ODPA ) ] to the new diamine ( I ) ...
... dianhydride [ namely , either 3,3 ' , 4,4 ' - biphenyltetracarboxylic dianhydride ( BPDA ) or 3,3 ' , 4,4 ' - bezophenone- tetracarboxylic dianhydride ( BTDA ) or 4,4 ' - oxydiphthalic anhydride ( ODPA ) ] to the new diamine ( I ) ...
Page 94
... dianhydride ( PMDA ) and hexafluoro- isopropylidene diphthalic acid dianhydride ( 6FDA ) combined with 4,4 ' - ( 9H - fluoren - 9- ylidene ) bisbenzeneamine ( DAPF ) has a dielectric constant very close to that of a fluorinated ...
... dianhydride ( PMDA ) and hexafluoro- isopropylidene diphthalic acid dianhydride ( 6FDA ) combined with 4,4 ' - ( 9H - fluoren - 9- ylidene ) bisbenzeneamine ( DAPF ) has a dielectric constant very close to that of a fluorinated ...
Page 99
... dianhydride and the diamine at a solids content of about 20 % by weight . Various dianhydride to diamine ratios were employed to produce polyimides 8 with number average molecular weights laying in the range of 2.5 × 104 to 5.0 × 10 ...
... dianhydride and the diamine at a solids content of about 20 % by weight . Various dianhydride to diamine ratios were employed to produce polyimides 8 with number average molecular weights laying in the range of 2.5 × 104 to 5.0 × 10 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch