Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 23
... dielectric constant , the in - plane dielectric constant , which is difficult to measure , is of particular importance for ILD applications . This parameter influences the capacitance between conductive lines and thus crosstalk ...
... dielectric constant , the in - plane dielectric constant , which is difficult to measure , is of particular importance for ILD applications . This parameter influences the capacitance between conductive lines and thus crosstalk ...
Page 79
... DIELECTRIC APPLICATIONS K. R. CARTER ** , H. J. CHA * , R. A. DIPIETRO * , C. J. HAWKER * , J. L. HEDRICK * , J. W. LABADIE * , J. E. McGRATH * , T. P. RUSSELL ' , M. I. SANCHEZ , S. A. SWANSON * , W ... dielectric constant of 2.6 and Auman.
... DIELECTRIC APPLICATIONS K. R. CARTER ** , H. J. CHA * , R. A. DIPIETRO * , C. J. HAWKER * , J. L. HEDRICK * , J. W. LABADIE * , J. E. McGRATH * , T. P. RUSSELL ' , M. I. SANCHEZ , S. A. SWANSON * , W ... dielectric constant of 2.6 and Auman.
Page 135
... enhanced Mat . Res . Soc . Symp . Proc . Vol . 381 © 1995 Materials Research Society chemical vapor deposited ( PECVD ) SiO ,, 1 μm 135 Dielectric Properties of Low Dielectric Constant Polymeric Materials Flora S Ip and Chiu Ting.
... enhanced Mat . Res . Soc . Symp . Proc . Vol . 381 © 1995 Materials Research Society chemical vapor deposited ( PECVD ) SiO ,, 1 μm 135 Dielectric Properties of Low Dielectric Constant Polymeric Materials Flora S Ip and Chiu Ting.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch