Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 61
... DIELECTRIC FILM 1995 0.35 3.9 1998 0.25 2.9 2001 0.18 2.3 2004 0.12 1.7 In addition to organic polymers , many of which exhibit dielectric constants of around 3 , there are at least two other classes of materials currently under ...
... DIELECTRIC FILM 1995 0.35 3.9 1998 0.25 2.9 2001 0.18 2.3 2004 0.12 1.7 In addition to organic polymers , many of which exhibit dielectric constants of around 3 , there are at least two other classes of materials currently under ...
Page 239
... films for use as interlayer dielectrics in ULSI multilevel interconnections are investigated . The interlayer dielectric film properties and their formation techniques have to meet the following requirements : ( 1 ) a low dielectric ...
... films for use as interlayer dielectrics in ULSI multilevel interconnections are investigated . The interlayer dielectric film properties and their formation techniques have to meet the following requirements : ( 1 ) a low dielectric ...
Page 242
... film shows the highest values of 90 % . Global planarization is almost impossible to achieve for the RTCVD - SiOF film . Although the FAST - SOG film shows low RTCVD - SIOF LPD - SiO2 FAST - SOG TEOS / 03 On Wirings On Field ( a ) ( b ) ...
... film shows the highest values of 90 % . Global planarization is almost impossible to achieve for the RTCVD - SiOF film . Although the FAST - SOG film shows low RTCVD - SIOF LPD - SiO2 FAST - SOG TEOS / 03 On Wirings On Field ( a ) ( b ) ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch