Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 79
Page 10
... material is of good thermal stability . Candidate materials under evaluation represent a cross section of different families of organic low k dielectric materials . They are listed in Table IV . The dielectric constant values , obtained ...
... material is of good thermal stability . Candidate materials under evaluation represent a cross section of different families of organic low k dielectric materials . They are listed in Table IV . The dielectric constant values , obtained ...
Page 14
... dielectric material AP : adhesion promoter # : The test with adhesion promoter was skipped . Table VII Adhesion test for low k dielectric materials rather than on the polymer layer . An example of the etched sub - half micron via holes ...
... dielectric material AP : adhesion promoter # : The test with adhesion promoter was skipped . Table VII Adhesion test for low k dielectric materials rather than on the polymer layer . An example of the etched sub - half micron via holes ...
Page 51
... MATERIALS FOR SPIN - ON DIELECTRIC FILMS JAMES V. CRIVELLO Department of Chemistry , Rensselaer Polytechnic Institute , Troy , New York , 12180 ... constant is reduced . *Novel Photocurable Materials for Spin-On Dielectric Films Crivello.
... MATERIALS FOR SPIN - ON DIELECTRIC FILMS JAMES V. CRIVELLO Department of Chemistry , Rensselaer Polytechnic Institute , Troy , New York , 12180 ... constant is reduced . *Novel Photocurable Materials for Spin-On Dielectric Films Crivello.
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch