Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 5
Page 66
... diffusion coefficient ) of the polymers . Another indication of the thermal stability of polymeric coatings is derived from a profile of the change in film thickness with a series of thermal exposures ( cures ) at high temperature . The ...
... diffusion coefficient ) of the polymers . Another indication of the thermal stability of polymeric coatings is derived from a profile of the change in film thickness with a series of thermal exposures ( cures ) at high temperature . The ...
Page 111
... diffusion [ 4 ] . Previous studies using SIMS ( Secondary Ion Mass Spectroscopy ) indicated copper to move rapidly throughout polyimide spin cast films [ 5 ] . When copper diffuses as a singly charged positive ion through the dielectric ...
... diffusion [ 4 ] . Previous studies using SIMS ( Secondary Ion Mass Spectroscopy ) indicated copper to move rapidly throughout polyimide spin cast films [ 5 ] . When copper diffuses as a singly charged positive ion through the dielectric ...
Page 278
... diffusion barriers or encapsulants . This work was supported through the Laboratory Directed Research and Development Program , Sandia National Laboratories , by the U.S. Department of Energy under contract no . DE - AC04-94AL85000 ...
... diffusion barriers or encapsulants . This work was supported through the Laboratory Directed Research and Development Program , Sandia National Laboratories , by the U.S. Department of Energy under contract no . DE - AC04-94AL85000 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch