Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 263
... drying . Dried gels were characterized using : 1 ) helium pycnometry ( skeletal density ) , 2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage ) , 4 ) nitrogen adsorption / condensation ( surface area ...
... drying . Dried gels were characterized using : 1 ) helium pycnometry ( skeletal density ) , 2 ) mercury displacement ( bulk density ) , 3 ) linear dilatometry ( drying shrinkage ) , 4 ) nitrogen adsorption / condensation ( surface area ...
Page 265
... drying time and temperature . Associated with these strength changes are other microstructural modifications such as pore coarsening , pore surface chemistry changes and surface area loss as well as changes in the degree of shrinkage ...
... drying time and temperature . Associated with these strength changes are other microstructural modifications such as pore coarsening , pore surface chemistry changes and surface area loss as well as changes in the degree of shrinkage ...
Page 269
... drying is normally accomplished by supercritical extraction ( SCE ) of the solvent , but recent reports describe successful silica aerogels by evaporative drying in air [ 4,5 ] . In the SCE process , the gel is placed in a pressure ...
... drying is normally accomplished by supercritical extraction ( SCE ) of the solvent , but recent reports describe successful silica aerogels by evaporative drying in air [ 4,5 ] . In the SCE process , the gel is placed in a pressure ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch