Low-dielectric Constant Materials |
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Page 14
RELIABILITY CONCERNS It is very difficult to predict the impact of new materials
on the reliability of device operation, such as mechanical stress, conductor
electromigration and stress migration, trapped charge or mobile ions, hot electron
...
RELIABILITY CONCERNS It is very difficult to predict the impact of new materials
on the reliability of device operation, such as mechanical stress, conductor
electromigration and stress migration, trapped charge or mobile ions, hot electron
...
Page 178
Elemental copper has better or at least similar electromigration compared to
aluminum-copper alloys in planar test structures (nearly two orders of magnitude
better than elemental aluminum). Reported results indicate more than an order of
...
Elemental copper has better or at least similar electromigration compared to
aluminum-copper alloys in planar test structures (nearly two orders of magnitude
better than elemental aluminum). Reported results indicate more than an order of
...
Page 226
Reliability data was collected from Ml stripe electromigration structures for
comparison of polyimide coated and SiOj (control) coated structures. An
experiment was designed to examine the effects of: (1) the presence or absence
of PEN liner ...
Reliability data was collected from Ml stripe electromigration structures for
comparison of polyimide coated and SiOj (control) coated structures. An
experiment was designed to examine the effects of: (1) the presence or absence
of PEN liner ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |