Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 53
... electron donating group and disfavored when it is an electron withdrawing moiety . With these considerations and the requirement of thermal stability in mind , we have chosen to prepare a series of monomers in which Y is an electron ...
... electron donating group and disfavored when it is an electron withdrawing moiety . With these considerations and the requirement of thermal stability in mind , we have chosen to prepare a series of monomers in which Y is an electron ...
Page 250
... electron mobilities . " The helicon reactor was powered by a 13.56 MHz 3 kW power source , which was coupled to a helical coil wound around a quartz tube located at the end of a stainless - steel vacuum chamber . The vacuum chamber was ...
... electron mobilities . " The helicon reactor was powered by a 13.56 MHz 3 kW power source , which was coupled to a helical coil wound around a quartz tube located at the end of a stainless - steel vacuum chamber . The vacuum chamber was ...
Page 278
... Electron Devices 36 , 1610 ( 1989 ) . 9 . W. Schmollla and H. L. Hartnagel , Solid State Electron . 26 , 931 ( 1983 ) . 10. M. Hirayama and K. Shohno , J. Electrochem . Soc . 122 , 1671 ( 1975 ) . 11. M. J. Rand and J. F. Roberts , J ...
... Electron Devices 36 , 1610 ( 1989 ) . 9 . W. Schmollla and H. L. Hartnagel , Solid State Electron . 26 , 931 ( 1983 ) . 10. M. Hirayama and K. Shohno , J. Electrochem . Soc . 122 , 1671 ( 1975 ) . 11. M. J. Rand and J. F. Roberts , J ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch