Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 142
... elongation is smaller than 0.5 % . At higher temperature , the Young's modulus reduces significantly and the elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young's modulus of various electronic materials are ...
... elongation is smaller than 0.5 % . At higher temperature , the Young's modulus reduces significantly and the elongation at break ( EAB ) is substantially higher ( see Table 1 ) . Young's modulus of various electronic materials are ...
Page 144
... Elongation ( % ) Fig.3 Stress vs. elongation curve of BPDA - PDA polyimide film . 400 300 200 100 0 0 20 40 25 ° C 100 ° C 200 ° C 300 ° C 400 ° C 60 80 Elongation ( % ) Fig.4 Stress vs. elongation curve of PMDA - ODA polyimide film ...
... Elongation ( % ) Fig.3 Stress vs. elongation curve of BPDA - PDA polyimide film . 400 300 200 100 0 0 20 40 25 ° C 100 ° C 200 ° C 300 ° C 400 ° C 60 80 Elongation ( % ) Fig.4 Stress vs. elongation curve of PMDA - ODA polyimide film ...
Page 145
... Elongation At Break ( % ) 37.4 41.6 45.2 57.9 > 70 ** Ultimate Tensile Strength ( MPa ) 561 535 416 298 > 138 ** * At 0.5 % elongation . ** Larger than the measurement limit . Table 2 : Mechanical properties of PMDA - ODA ( DuPont ...
... Elongation At Break ( % ) 37.4 41.6 45.2 57.9 > 70 ** Ultimate Tensile Strength ( MPa ) 561 535 416 298 > 138 ** * At 0.5 % elongation . ** Larger than the measurement limit . Table 2 : Mechanical properties of PMDA - ODA ( DuPont ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch