Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 121
For the combined thickness of the silicon boat and wafer that was used ( 750 pm )
, it is obvious that all but the low energy photons will get absorbed before
reaching the interface . Consequently , there will be almost no photoexcitation
taking ...
For the combined thickness of the silicon boat and wafer that was used ( 750 pm )
, it is obvious that all but the low energy photons will get absorbed before
reaching the interface . Consequently , there will be almost no photoexcitation
taking ...
Page 252
The leakage current of the a - C : H films Cis binding energy ( eV ] was 108 A /
cm2 at 1 MV / cm , and was Fig . 3 . Comparison of the Cls signals : ( a )
suppressed to 100 A / cm2 by the a - C with CH , in the parallel plate reactor ;
fluorination .
The leakage current of the a - C : H films Cis binding energy ( eV ] was 108 A /
cm2 at 1 MV / cm , and was Fig . 3 . Comparison of the Cls signals : ( a )
suppressed to 100 A / cm2 by the a - C with CH , in the parallel plate reactor ;
fluorination .
Page 274
The energy density of the laser light focused onto the rotating graphite target was
adjusted between 5 to 48 J / cm2 leading to films with a varying degree of sp3
bonding . In all cases , deposition was performed at room temperature with no ...
The energy density of the laser light focused onto the rotating graphite target was
adjusted between 5 to 48 J / cm2 leading to films with a varying degree of sp3
bonding . In all cases , deposition was performed at room temperature with no ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers