Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 7
Process Flow TIN ΑΙ - Ti ILD SIO2 Deposition & Planarization Photolithography - Via Pattern Plasma Etch - Via Pattern Photoresist Strip TIN Liner Deposition CVD W Deposition / Etch - back Ti / AI / TiN Conductor Deposition ...
Process Flow TIN ΑΙ - Ti ILD SIO2 Deposition & Planarization Photolithography - Via Pattern Plasma Etch - Via Pattern Photoresist Strip TIN Liner Deposition CVD W Deposition / Etch - back Ti / AI / TiN Conductor Deposition ...
Page 115
Reactive ion etching of the TAE polymer films was accomplished using a mixture of CF , and Oz . The MERIE system was ... in mind and has very low operating pressures and very little ion damage , even when operated at 2.5 kW . Etch rates ...
Reactive ion etching of the TAE polymer films was accomplished using a mixture of CF , and Oz . The MERIE system was ... in mind and has very low operating pressures and very little ion damage , even when operated at 2.5 kW . Etch rates ...
Page 222
PENDep TIN AR If Polyimide AP Coat / B ake PL CoatCure Al ( Cu ) Hardmask PEN Dep TVTIN Glue Via Photo Via Etch HM PBN A Isot ropic A Anisotropic PEN / TIN PEN TIN ARC TIN ARC Pl Coat / Cure P Dep Bond Pad Photo Bond Pad Etch HM PEN A ...
PENDep TIN AR If Polyimide AP Coat / B ake PL CoatCure Al ( Cu ) Hardmask PEN Dep TVTIN Glue Via Photo Via Etch HM PBN A Isot ropic A Anisotropic PEN / TIN PEN TIN ARC TIN ARC Pl Coat / Cure P Dep Bond Pad Photo Bond Pad Etch HM PEN A ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |