Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 7
... Etch - Via Pattern Photoresist Strip TiN Liner Deposition TIN ΑΙ = TIN CVD W Deposition / Etch - back Ti / AI / TIN Conductor Deposition W Photolithography - Conductor Pattern SiO2 SiO2 Plasma Etch - Conductor Pattern Photoresist Strip ...
... Etch - Via Pattern Photoresist Strip TiN Liner Deposition TIN ΑΙ = TIN CVD W Deposition / Etch - back Ti / AI / TIN Conductor Deposition W Photolithography - Conductor Pattern SiO2 SiO2 Plasma Etch - Conductor Pattern Photoresist Strip ...
Page 222
... Etch HM PEN P Isotropic P Anisotropic PEN / TIN Pl Coat / Cure PEN Dep Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip ...
... Etch HM PEN P Isotropic P Anisotropic PEN / TIN Pl Coat / Cure PEN Dep Bond Pad Photo Bond Pad Etch HM FEN P Anisotropic Polyimide TIN Al ( Cu ) PEN TIN ARC Al ( Cu ) . Polyimide Al ( Cu ) TIN ARC ACU ) M2 Dep M2 PR M2 Etch & PR Strip ...
Page 223
... etch process which requires wet photoresist stripping . These unit steps were combined with our via etch process to produce 2 - level metal test structures to verify the need for bake steps , pre - M2 dep wet cleans and RF etch ...
... etch process which requires wet photoresist stripping . These unit steps were combined with our via etch process to produce 2 - level metal test structures to verify the need for bake steps , pre - M2 dep wet cleans and RF etch ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch