Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 183
... etch rate of copper even though the solubility of copper is high in the slurry . The Cu2O surface layer results in a low removal rate in the low features as the direct dissolution rate of copper is small . The resultant high ratio of polish ...
... etch rate of copper even though the solubility of copper is high in the slurry . The Cu2O surface layer results in a low removal rate in the low features as the direct dissolution rate of copper is small . The resultant high ratio of polish ...
Page 191
... Rate Etch Rate Ratio 15 Polish Rate / Etch Rate 2 - @ CO 3 0.00 0 0 2 4 6 8 10 HNO3 Concentration ( wt % ) Figure 6 Polish and Etch Rates in HNO , -based Slurry ( from ref . 13 ) . the copper surface is very scratch - free . The 191.
... Rate Etch Rate Ratio 15 Polish Rate / Etch Rate 2 - @ CO 3 0.00 0 0 2 4 6 8 10 HNO3 Concentration ( wt % ) Figure 6 Polish and Etch Rates in HNO , -based Slurry ( from ref . 13 ) . the copper surface is very scratch - free . The 191.
Page 281
... etch rate and refractive index of SOG films versus plasma treatment temper- ature . Fig . 4 Wet etch rate and refractive index of SOG films versus plasma treatment time . Figure 3 shows the wet etch rate by using a BOE ( NH4F : HF = 50 ...
... etch rate and refractive index of SOG films versus plasma treatment temper- ature . Fig . 4 Wet etch rate and refractive index of SOG films versus plasma treatment time . Figure 3 shows the wet etch rate by using a BOE ( NH4F : HF = 50 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch