Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 42
... evaporation and decomposition is observed . The decomposition is due to evaporation of CF3 bonds . The initial weight loss of the film in the temperature range between 250 ° C and 350 ° C is due to residual solvent NMP . The dielectric ...
... evaporation and decomposition is observed . The decomposition is due to evaporation of CF3 bonds . The initial weight loss of the film in the temperature range between 250 ° C and 350 ° C is due to residual solvent NMP . The dielectric ...
Page 42
... evaporation and decomposition is observed . The decomposition is due to evaporation of CF3z bonds . The initial weight loss of the film in the temperature range between 250°C and 350°C is due to residual solvent NMP . The dielectric ...
... evaporation and decomposition is observed . The decomposition is due to evaporation of CF3z bonds . The initial weight loss of the film in the temperature range between 250°C and 350°C is due to residual solvent NMP . The dielectric ...
Page 95
... evaporated at 30 ̊C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding the required amount of xylene . The inherent ...
... evaporated at 30 ̊C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding the required amount of xylene . The inherent ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch