Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 157
In these techniques the electric fields are nearly normal to the sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the ...
In these techniques the electric fields are nearly normal to the sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the ...
Page 268
Linear behavior is also predicted from a simple parallel mixing rule model where the two phases are considered to have parallel capacitances in the field direction . The following assumptions are applied ; the two constituent phases ...
Linear behavior is also predicted from a simple parallel mixing rule model where the two phases are considered to have parallel capacitances in the field direction . The following assumptions are applied ; the two constituent phases ...
Page 276
BN RESULTS All of the BN films were found to be highly insulating , with resistivities normal to the film approaching 1014 S2cm and breakdown field strengths greater than 2 MV / cm . The dielectric constants for the BN films were ...
BN RESULTS All of the BN films were found to be highly insulating , with resistivities normal to the film approaching 1014 S2cm and breakdown field strengths greater than 2 MV / cm . The dielectric constants for the BN films were ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |