Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 155
Therefore ceff depends on the fields in the sample and the fringing fields . The
effective dielectric constant is a very crude concept since complicated field
structure is mapped into a very limited model . In a more fundamental approach ,
sample ...
Therefore ceff depends on the fields in the sample and the fringing fields . The
effective dielectric constant is a very crude concept since complicated field
structure is mapped into a very limited model . In a more fundamental approach ,
sample ...
Page 161
magnetic field couplers _ - - - Figure 6 : Full sheet resonance technique in the
sample . The main difficulty in this technique is mode identification and
degenerate modes . The method has the advantage that the error introduced by
the sample ...
magnetic field couplers _ - - - Figure 6 : Full sheet resonance technique in the
sample . The main difficulty in this technique is mode identification and
degenerate modes . The method has the advantage that the error introduced by
the sample ...
Page 241
x 100 ( % ) where to is the wiring step height , ts , is the dielectric film step height
between wiring and field regions , and ts , is the dielectric film step height at
narrow gaps . Other properties of the films such as chemical , physical , thermal
and ...
x 100 ( % ) where to is the wiring step height , ts , is the dielectric film step height
between wiring and field regions , and ts , is the dielectric film step height at
narrow gaps . Other properties of the films such as chemical , physical , thermal
and ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers