Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 157
... fields are nearly normal to the sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the capacitance with and without sample ...
... fields are nearly normal to the sample plane . The difficulty with these measurements resides in minimizing fringing field effects . The fringe field is usually partially eliminated by measuring the capacitance with and without sample ...
Page 162
... field component . In the future there will be increasing demand to measure thinner low - loss materials of low to high dielectric constant to higher accuracy . This presents a metrology challenge since the uncertainty in thick- ness of ...
... field component . In the future there will be increasing demand to measure thinner low - loss materials of low to high dielectric constant to higher accuracy . This presents a metrology challenge since the uncertainty in thick- ness of ...
Page 268
... field direction . The following assumptions are applied ; the two constituent phases have dielectric properties as though they are pure single phases , interfacial effects are neglected ( although this assumption is weak for aerogels ...
... field direction . The following assumptions are applied ; the two constituent phases have dielectric properties as though they are pure single phases , interfacial effects are neglected ( although this assumption is weak for aerogels ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch