Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 55
Page 33
... film due to water absorption before and after immersion of the fluorinated films in deionized water at room ... thickness , thickness variation , refractive index , and weight loss were measured as a function of the anneal temperature ...
... film due to water absorption before and after immersion of the fluorinated films in deionized water at room ... thickness , thickness variation , refractive index , and weight loss were measured as a function of the anneal temperature ...
Page 66
... film form and as a coating on silicon substrates using a variety of techniques . Thermogravimetric analysis ( TGA ) of nominally 10μm thick films was conducted in a nitrogen ambient using a thermal gradient of 2.5 ° C / minute . Under ...
... film form and as a coating on silicon substrates using a variety of techniques . Thermogravimetric analysis ( TGA ) of nominally 10μm thick films was conducted in a nitrogen ambient using a thermal gradient of 2.5 ° C / minute . Under ...
Page 149
... film thickness at four different initial film thicknesses . Hydrogen passivated silicon ( 111 ) surface was used as the substrate . The thickness was determined from x - ray reflectivity measurements during sample heating at a rate ~ 10 ...
... film thickness at four different initial film thicknesses . Hydrogen passivated silicon ( 111 ) surface was used as the substrate . The thickness was determined from x - ray reflectivity measurements during sample heating at a rate ~ 10 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch