Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 46
... film with all the demanded properties , we have initiated research in two directions , molecular architecture and process methodology . Chemical vapor deposition has been one of the preferred processes for generating thin films of ...
... film with all the demanded properties , we have initiated research in two directions , molecular architecture and process methodology . Chemical vapor deposition has been one of the preferred processes for generating thin films of ...
Page 253
... Deposition rate of a - C : F films as a function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH ...
... Deposition rate of a - C : F films as a function of H , flow rate . RF source power was 2kW . helicon 60 C2F CF 4 thickness ( after anneal / as - deposited ) [ % ] 20 20 60 100 80 40- parallel - plate CH , + CF , powered electrode CH ...
Page 275
... deposited in vacuum at 5 J / cm2 to ~ 108 Ncm for films deposited in vacuum at 48 J / cm2 . Films deposited at 45 J / cm2 in 10 mTorr ambients of H2 or N2 showed resistivities > 106 cm and less than 100 Ncm , respectively . Sheet ...
... deposited in vacuum at 5 J / cm2 to ~ 108 Ncm for films deposited in vacuum at 48 J / cm2 . Films deposited at 45 J / cm2 in 10 mTorr ambients of H2 or N2 showed resistivities > 106 cm and less than 100 Ncm , respectively . Sheet ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch