Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 107
... Fluorination Time ( min . ) Figure 2. er of fluorinated poly - 1,3 , -butadiene of fluorination time as a function Table 1 summarizes the er of various fluorinated hydrocarbon polymers . After the fluorination , er of ...
... Fluorination Time ( min . ) Figure 2. er of fluorinated poly - 1,3 , -butadiene of fluorination time as a function Table 1 summarizes the er of various fluorinated hydrocarbon polymers . After the fluorination , er of ...
Page 108
... fluorinated polymers are inferior to that of the non - fluorinated polymers . We believe that this is due to a decrease in the molecular weight resulting from C - C bond cleavage . Such a side reaction will be controlled by removing ...
... fluorinated polymers are inferior to that of the non - fluorinated polymers . We believe that this is due to a decrease in the molecular weight resulting from C - C bond cleavage . Such a side reaction will be controlled by removing ...
Page 109
... fluorination . Although both the cross- linking and cleavage occur during the fluorination , the molecular weight of the fluorinated PVDF decreases , because the thermal stability of the fluorinated PVDF is inferior to that of the non - ...
... fluorination . Although both the cross- linking and cleavage occur during the fluorination , the molecular weight of the fluorinated PVDF decreases , because the thermal stability of the fluorinated PVDF is inferior to that of the non - ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch