Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 31
... fluorinated polyimide are described and discussed . Weight loss , FTIR , and ellipsometric measurements have been carried out . The DuPont fluorinated polyimide thin film was observed to be thermally stable up to 450 ° C , which is ...
... fluorinated polyimide are described and discussed . Weight loss , FTIR , and ellipsometric measurements have been carried out . The DuPont fluorinated polyimide thin film was observed to be thermally stable up to 450 ° C , which is ...
Page 32
... fluorinated polyimide film , the silicon or oxidized silicon wafers were cleaned in Karos Acid ( 1 H2 SO4 : 1H2 O2 ) for 3 minutes to remove any organic or metallic residues , followed by rinsing in deionized water and then blow- drying ...
... fluorinated polyimide film , the silicon or oxidized silicon wafers were cleaned in Karos Acid ( 1 H2 SO4 : 1H2 O2 ) for 3 minutes to remove any organic or metallic residues , followed by rinsing in deionized water and then blow- drying ...
Page 40
... fluorinated polyimide film soft baked as well as annealed below 300 ° C in air on thin thermal oxide is shown in Fig . 10a and 10b . These fluorinated polyimide films do not show any hysterisis behavior . However , the fluorinated polyimide ...
... fluorinated polyimide film soft baked as well as annealed below 300 ° C in air on thin thermal oxide is shown in Fig . 10a and 10b . These fluorinated polyimide films do not show any hysterisis behavior . However , the fluorinated polyimide ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch